Recently, new progress has been made in the Innosecco GaN project in Suzhou, Jiangsu.
According to Xinhuanet, the Innosecco gallium nitride project, a major project in Jiangsu Province, has completed the construction of the first phase of the plant and the move-in of production equipment.
Wang Peiren, deputy general manager of Inossec (Suzhou) semiconductor Co., Ltd., said that according to the plan, an 8-inch third-generation compound semiconductor silicon-based gallium nitride mass production line will be built within two years of the Inosseco gallium nitride project. Three years after it is put into production, the overall goal of producing 780,000 pieces of power control circuits and semiconductor power Electronic devices per year will be achieved.
According to the data, the first-phase investment of the Innosec gallium nitride project exceeds 6 billion yuan, and the annual output value is expected to exceed 10 billion yuan after completion. The project mainly involves device design, driver IC design and development, material manufacturing, device preparation, A wide-bandgap semiconductor device manufacturing platform for the entire industry chain of high-end packaging and testing and module processing. After completion, it will become a world-class R&D and production platform for the entire third-generation semiconductor industry chain integrating R&D, design, epitaxy production, chip manufacturing, and subassembly testing.
Sun Zaiheng, general manager of Innosec, previously stated that the project plans to achieve a monthly production of 65,000 8-inch silicon-based gallium nitrides after full production in the next two to three years.
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