“The 5G millimeter wave market is emerging and is expected to achieve high double-digit growth. Yole predicts that by 2026, the market value of AiP and millimeter wave front-end modules will reach US$2.7 billion. With the introduction of FDSOI into this market, Samsung uses Soitec’s FDSOI substrate as an alternative to Qualcomm’s bulk CMOS solution. This may drive the adoption of 5G millimeter waves.
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System Plus Consulting and Yole Développement dismantled Pixel 6 Pro a few days ago. The dismantling showed some interesting phenomena, including Samsung’s entry into the market previously dominated by Qualcomm. As shown in the figure below, Samsung provides all the key components of the system: modems, IF transceivers, millimeter wave radio frequency transceivers, and power management ICs.
Secondly, Murata is using its most advanced MetroCirc substrate to process AiP (packaged antenna) components, which is an innovative and flexible antenna design that realizes two radiation directions (back and side) from a unique component, including a complete This is the first in the industry because the competing solution is based on two components, each of which has a partially used 16-channel transceiver. Last but not least, the innovation occurs inside the millimeter wave antenna package itself, as shown in the figure below. The millimeter wave radio frequency transceiver is designed on Samsung’s FDSOI 28 nm platform (28FDS). Another industry first.
The 5G millimeter wave market is emerging and is expected to achieve high double-digit growth. Yole predicts that by 2026, the market value of AiP and millimeter wave front-end modules will reach US$2.7 billion. With the introduction of FDSOI into this market, Samsung uses Soitec’s FDSOI substrate as an alternative to Qualcomm’s bulk CMOS solution. This may drive the adoption of 5G millimeter waves.
In its latest cellular radio frequency front-end report, Yole predicts that FDSOI will enter the market as early as 2022. FDSOI is the ideal technology for 5G millimeter wave applications. It provides a fully integrated method to recombine the intermediate frequency-converted to millimeter wave signals (and vice versa) and millimeter wave RF front ends, including transmit and receive paths.
In addition to the undeniable integration advantages of mixed-signal and RF circuits, FDSOI is also a good technology for RF applications. It can provide sufficient power levels at millimeter wave frequencies, has the most advanced power efficiency, and can be equivalent to low heat dissipation. And longer battery life. And the high power level capability will achieve a better radio link budget with the base station, thereby providing better quality of service.
The Links: PCA9515APWR SKT552-16E